Anomalous Hall effect superimposed in polycrystalline SrRuO3 thick film

被引:5
|
作者
Tian, Yingyi
Wang, Shuanhu [1 ]
Wei, Xiangyang
Yang, Ruishu
Jin, Kexin [1 ]
机构
[1] Northwestern Polytech Univ, Shaanxi Key Lab Condensed Matter Struct & Properti, Xi'an 710072, Peoples R China
关键词
BERRY PHASE; MAGNETOTRANSPORT;
D O I
10.1063/5.0085391
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electric, magnetic, and thermal properties of transition metal oxide films can be modulated by introducing polycrystalline at the macroscopic grain boundaries. Based on these points, in this work, we studied the two-channel anomalous Hall effect (AHE) in polycrystalline ferromagnetic SrRuO3 (SRO) films. The magnetic regions with different crystal directions have different coercivities, resulting in two opposite AHE channels in the polycrystalline SRO layer. However, single-crystal SRO films prepared under the same conditions are found to exhibit only one AHE. The superposition of the two AHE leads to the hump-like behavior of the Hall resistance loop, which is caused by the change of crystalline. This observation provides a new way to explain the hump-like feature of SRO.& nbsp;Published under an exclusive license by AIP Publishing
引用
收藏
页数:6
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