Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films

被引：2
|
作者：
Fan, Ranran [1 ]
Lu, Fei [1 ]
Li, Kaikai [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China
来源：
NANOMATERIALS | 2017年 / 7卷 / 10期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; nanomaterials; rare-earth-doped materials; optical properties of thin films; deposition and fabrication; VISIBLE PHOTOLUMINESCENCE; INFRARED PHOTOLUMINESCENCE; THIN-FILMS; LUMINESCENCE; SIO2; ZNO; SILICA; EXCITONS; MATRICES; OXIDE;
D O I：
10.3390/nano7100311
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400-800 degrees C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582-593 nm, which was consistent with the calculated energy of the exciton of the similar to 5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 m emission, and it is considered that the 1.54 m PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er3+ and the local environment change of Er3+.
引用
收藏
页数：8
相关论文
共 50 条
  • [41] Properties of co-sputtered YBa2Cu3O7 and CeO2 thin films
    Cukauskas, E.J.
    Allen, L.H.
    Journal of Applied Physics, 1996, 80 (10):
  • [42] The properties of co-sputtered YBa2Cu3O7 and CeO2 thin films
    Cukauskas, EJ
    Allen, LH
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) : 5843 - 5849
  • [43] Enhanced photoluminescence of ZnO/Er2O3 core-shell structure nanorods synthesized by pulsed laser deposition
    Li, S. Z.
    Gan, C. L.
    Cai, H.
    Yuan, C. L.
    Guo, J.
    Lee, P. S.
    Ma, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [44] Fabrication and evaluation of green-light emitting Ta2O5:Er, Ce co-sputtered thin films
    Miura, K.
    Osawa, T.
    Suzuki, T.
    Yokota, Y.
    Hanaizumi, O.
    RESULTS IN PHYSICS, 2015, 5 : 78 - 79
  • [45] Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped ?-Ga2O3 thin films on sapphire substrates
    Singh, Anoop Kumar
    Yen, Chao-Chun
    Chang, Kai-Ping
    Wuu, Dong-Sing
    JOURNAL OF LUMINESCENCE, 2023, 260
  • [46] Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices
    Zhu, Y
    Ong, PP
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (18) : 4075 - 4080
  • [47] 1.54 μm photoluminescence from Er-doped sol-gel derived In2O3 films embedded in porous anodic alumina
    Podhorodecki, A
    Kudrawiec, R
    Misiewicz, J
    Gaponenko, NV
    Tsyrkunov, DA
    OPTICAL MATERIALS, 2006, 28 (6-7) : 685 - 687
  • [48] Strain Induced Enhancement of Photoluminescence of Er3+-Yb3+ co-doped Al2O3 Films
    Xu, Zhengying
    Bai, Ningfeng
    Sun, Xiaohan
    2017 2ND IEEE INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS AND PHOTONICS (ICTP), 2017, : 252 - 254
  • [49] RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices
    Deepak, G. C.
    Bhat, Navakanta
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 175 - 181
  • [50] Raman study of stress effect on Ge nanocrystals embedded in Al2O3
    Pinto, S. R. C.
    Rolo, A. G.
    Chahboun, A.
    Kashtiban, R. J.
    Bangert, U.
    Gomes, M. J. M.
    THIN SOLID FILMS, 2010, 518 (19) : 5378 - 5381
12345