Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films

被引：2
|
作者：
Fan, Ranran [1 ]
Lu, Fei [1 ]
Li, Kaikai [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China
来源：
NANOMATERIALS | 2017年 / 7卷 / 10期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; nanomaterials; rare-earth-doped materials; optical properties of thin films; deposition and fabrication; VISIBLE PHOTOLUMINESCENCE; INFRARED PHOTOLUMINESCENCE; THIN-FILMS; LUMINESCENCE; SIO2; ZNO; SILICA; EXCITONS; MATRICES; OXIDE;
D O I：
10.3390/nano7100311
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400-800 degrees C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582-593 nm, which was consistent with the calculated energy of the exciton of the similar to 5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 m emission, and it is considered that the 1.54 m PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er3+ and the local environment change of Er3+.
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页数：8
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