Metal nano-dot memory for high-density non-volatile memory application

被引：0

作者：

Kovanagi, M ^{[1
]}

Takata, M ^{[1
]}

Kurino, H ^{[1
]}

机构：

[1] Tohoku Univ, Dept Bioengn & Robot, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory. is proposed for a future high density non-volatile memory application [1]. Fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using Sputtering technique with a-special sputtering target. The diameter and the density of the MND in the film are typically 2-3nm and around 2x10(13)/cm(2) respectively, which were superior to that of Si nano-dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

引用

页码：885 / 889

页数：5

共 50 条

[41] Nanocrystal non-volatile memory devices
Horvath, Zs. J.
Basa, P.
THIN FILMS AND POROUS MATERIALS, 2009, 609 : 1 - 9
[42] Heterogeneous Index for Non-volatile Memory
Liu R.-C.
Zhang J.-C.
Luo Y.-P.
Jin P.-Q.
Ruan Jian Xue Bao/Journal of Software, 2022, 33 (03): : 832 - 848
[43] Resistance non-volatile memory - RRAM
Ignatiev, Alex
Wu, Naijuan
Chen, Xin
Nian, Yibo
Papagianni, Christina
Liu, Shangqing
Strozier, John
MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II, 2007, 997 : 181 - 189
[44] Introduction to non-volatile memory technologies
Asadinia, Marjan
Sarbazi-Azad, Hamid
DURABLE PHASE-CHANGE MEMORY ARCHITECTURES, 2020, 118 : 1 - 13
[45] Data Management in Non-Volatile Memory
Viglas, Stratis D.
SIGMOD'15: PROCEEDINGS OF THE 2015 ACM SIGMOD INTERNATIONAL CONFERENCE ON MANAGEMENT OF DATA, 2015, : 1707 - 1711
[46] ODOMETER USING NON-VOLATILE MEMORY
YATES, P
ELECTRONIC ENGINEERING, 1984, 56 (687): : 169 - 172
[47] Data Management on Non-Volatile Memory
Arulraj, Joy
SIGMOD '19: PROCEEDINGS OF THE 2019 INTERNATIONAL CONFERENCE ON MANAGEMENT OF DATA, 2019, : 1114 - 1114
[48] Controllable switching ratio in quantum dot/metal-metal oxide nanostructure based non-volatile memory device
Kannan, V.
Rhee, J. K.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 108 (01): : 59 - 63
[49] Vertical Cross-point Resistance Change Memory for Ultra-High Density Non-volatile Memory Applications
Yoon, Hong Sik
Baek, In-Gyu
Zhao, Jinshi
Sim, Hyunjun
Park, Min Young
Lee, Hansin
Oh, Gyu-Hwan
Shin, Jong Chan
Yeo, In-Seok
Chung, U-In
2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2009, : 26 - 27
[50] Nickel nanoparticle size and density effects on non-volatile memory performance
Verrelli, Emanuele
Galanopoulos, Giorgos
Zouboulis, Ilias
Tsoukalas, Dimitris
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (03):

← 1 2 3 4 5 →