Metal nano-dot memory for high-density non-volatile memory application

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory. is proposed for a future high density non-volatile memory application [1]. Fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using Sputtering technique with a-special sputtering target. The diameter and the density of the MND in the film are typically 2-3nm and around 2x10(13)/cm(2) respectively, which were superior to that of Si nano-dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.