Metal nano-dot memory for high-density non-volatile memory application

被引：0

作者：

Kovanagi, M ^{[1
]}

Takata, M ^{[1
]}

Kurino, H ^{[1
]}

机构：

[1] Tohoku Univ, Dept Bioengn & Robot, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory. is proposed for a future high density non-volatile memory application [1]. Fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using Sputtering technique with a-special sputtering target. The diameter and the density of the MND in the film are typically 2-3nm and around 2x10(13)/cm(2) respectively, which were superior to that of Si nano-dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

引用

页码：885 / 889

页数：5

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