Atomicaily Resolving Polymorphs and Crystal Structures of In2Se3

被引:106
|
作者
Liu, Lixuan [1 ,2 ]
Dong, Jiyu [2 ]
Huang, Junquan [2 ]
Nie, Anmin [2 ]
Zhai, Kun [2 ]
Xiang, Jianyong [2 ]
Wang, Bochong [2 ]
Wen, Fusheng [2 ]
Mu, Congpu [2 ]
Zhao, Zhisheng [2 ]
Gong, Yongji [1 ]
Tian, Yongjun [2 ]
Liu, Zhongyuan [2 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Ctr High Pressure Sci, Qinhuangdao 066004, Hebei, Peoples R China
基金
中国国家自然科学基金;
关键词
PHASE-TRANSFORMATION; LAYERED ALPHA-IN2SE3; GROWTH; FILMS; FERROELECTRICITY; GAMMA-IN2SE3; ARRAY;
D O I
10.1021/acs.chemmater.9b03499
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structures of the various phases endow In2Se3 unique properties as well as a broad range of potential applications. However, the controversy on the structures of In2Se3 strongly hinders the exploitation of its properties and potentially gives rise to misdirection of its applications. Here, taking advantage of state-of-the-art aberration-corrected scanning transmission electron microscopy, we demonstrate the atomic-scale structures of lab-created and purchased In2Se3 compounds. Six phases in three polymorphs at room temperature have been observed among all the samples, which include 2H and 3R alpha-In2Se3, IT, 2H, and 3R beta-In2Se3, and none-layered gamma-In2Se3. Raman spectra are directly correlated to individual In2Se3 phases, providing fingerprints for identifying various phases of In2Se3. In addition, obvious out-of-plane ferroelectricity of 2H alpha-In2Se3 was also observed by piezoresponse force microscopy, enabling its potential application in ferroelectric devices.
引用
收藏
页码:10143 / 10149
页数:7
相关论文
共 50 条
  • [31] Crystal structure and elementary electronic properties of Bi-stabilized α-In2Se3
    Ji, Huiwen
    Reijnders, Anjan
    Liang, Tian
    Schoop, L. M.
    Burch, K. S.
    Ong, N. P.
    Cava, R. J.
    MATERIALS RESEARCH BULLETIN, 2013, 48 (07) : 2517 - 2521
  • [32] REACTION OF INSB WITH INSE, IN2SE3 AND SB2SE3
    RAGIMOVA, VM
    ALIEVA, ZG
    MOVSUMZADE, AA
    SADYKHOVA, SA
    ZHURNAL NEORGANICHESKOI KHIMII, 1984, 29 (11): : 2888 - 2890
  • [33] Optical properties of imperfect In2Se3
    Sobolev, VV
    Sobolev, VV
    SEMICONDUCTORS, 2003, 37 (07) : 757 - 762
  • [34] PREPARATION AND CHARACTERIZATION OF IN2SE3 CRYSTALS
    DEBLASI, C
    DRIGO, AV
    MICOCCI, G
    TEPORE, A
    MANCINI, AM
    JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) : 455 - 458
  • [35] Ultrafast carrier dynamics in single-crystal In2Se3 thin layers
    Tao, Xin
    Mafi, Elham
    Gu, Yi
    APPLIED PHYSICS LETTERS, 2013, 103 (19)
  • [36] Bulkphotovoltaiceffectintwo-dimensionalferroelectricα-In2Se3
    Huiting WANG
    Shuaiqin WU
    Yan CHEN
    Qianru ZHAO
    Jinhua ZENG
    Ruotong YIN
    Yuqing ZHENG
    Chang LIU
    Shukui ZHANG
    Tie LIN
    Hong SHEN
    Xiangjian MENG
    Jun GE
    Xudong WANG
    Junhao CHU
    Jianlu WANG
    Science China(Information Sciences), 2025, 68 (02) : 285 - 292
  • [37] Thermoelectric properties of α-In2Se3 monolayer
    Nian, Taojie
    Wang, Zhenhai
    Dong, Baojuan
    APPLIED PHYSICS LETTERS, 2021, 118 (03)
  • [38] Raman scattering in α-In2Se3 crystals
    Lewandowska, R
    Bacewicz, R
    Filipowicz, J
    Paszkowicz, W
    MATERIALS RESEARCH BULLETIN, 2001, 36 (15) : 2577 - 2583
  • [39] Electrodeposition of indium selenide In2Se3
    Massaccesi, S
    Sanchez, S
    Vedel, J
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1996, 412 (1-2): : 95 - 101
  • [40] Anomalous photoconductivity in gamma In2Se3
    Sreekumar, R.
    Jayakrishnan, R.
    Kartha, C. Sudha
    Vijayakumar, K. P.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)