Bulkphotovoltaiceffectintwo-dimensionalferroelectricα-In2Se3

被引:0
|
作者
Huiting WANG [1 ,2 ]
Shuaiqin WU [1 ,3 ]
Yan CHEN [1 ,3 ]
Qianru ZHAO [1 ,2 ]
Jinhua ZENG [1 ,2 ]
Ruotong YIN [1 ,2 ]
Yuqing ZHENG [1 ,2 ]
Chang LIU [1 ]
Shukui ZHANG [1 ,4 ]
Tie LIN [1 ]
Hong SHEN [1 ]
Xiangjian MENG [1 ]
Jun GE [1 ]
Xudong WANG [1 ]
Junhao CHU [1 ,2 ,3 ]
Jianlu WANG [1 ,3 ,5 ]
机构
[1] State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences
[2] University of Chinese Academy of Sciences
[3] Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University
[4] Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences
[5] Frontier Institute of Chip and System,Fudan
关键词
D O I
暂无
中图分类号
TB34 [功能材料];
学科分类号
080501 ;
摘要
Non-centrosymmetric material systems can generate spontaneous photocurrent without a p-n junction under uniform illumination, which is known as the bulk photovoltaic effect(BPVE). It has garnered significant attention for its application potential in the fields of energy harvesting and photoelectric detection. In this study, we report the BPVE observed in twodimensional ferroelectric α-In2Se3 multilayer flakes. The reversal in spontaneous photocurrent polarity is observed and associated with the out-of-plane ferroelectric polarization direction. The spontaneous photocurrent originating from the shift current is also polarization-sensitive. The amplitude of spontaneous photocurrent is further increased by one order of magnitude through vacuum annealing. Our results provide a further application potential for new-generation photodetectors based on BPVE with low power consumption and multi-dimensional optoelectronic detection.
引用
收藏
页码:285 / 292
页数:8
相关论文
共 50 条
  • [1] POLYMORPHISM OF IN2SE3
    LUTZ, HD
    FISCHER, M
    BALDUS, HP
    BLACHNIK, R
    JOURNAL OF THE LESS-COMMON METALS, 1988, 143 (1-2): : 83 - 92
  • [2] Controlled Crystal Growth of Indium Selenide, In2Se3, and the Crystal Structures of α-In2Se3
    Kuepers, Michael
    Konze, Philipp M.
    Meledin, Alexander
    Mayer, Joachim
    Englert, Ulli
    Wuttig, Matthias
    Dronskowski, Richard
    INORGANIC CHEMISTRY, 2018, 57 (18) : 11775 - 11781
  • [3] Optimization of In2Se3/Si(111) Heteroepitaxy To Enable Bi2Se3/In2Se3 Bilayer Growth
    Rathi, Somilkumar J.
    Smith, David J.
    Drucker, Jeff
    CRYSTAL GROWTH & DESIGN, 2014, 14 (09) : 4617 - 4623
  • [4] O POLIMORFIZME IN2SE3
    SLAVNOVA, GK
    ZHURNAL NEORGANICHESKOI KHIMII, 1963, 8 (10): : 2217 - 2221
  • [5] PHASE TRANSITION OF IN2SE3
    MIYAZAWA, H
    SUGAIKE, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (03) : 312 - 312
  • [6] Crystal structure of κ-In2Se3
    Jasinski, J
    Swider, W
    Washburn, J
    Liliental-Weber, Z
    Chaiken, A
    Nauka, K
    Gibson, GA
    Yang, CC
    APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4356 - 4358
  • [7] The α-In2Se3 THz Photodetector
    Chen, Jing
    Wu, Fan
    Li, Ping
    Hu, Jianguo
    Tian, He
    Wu, Xiao-Ming
    Yang, Yi
    Ren, Tian-Ling
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (08) : 4371 - 4376
  • [8] Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers
    Bodnar, I. V.
    Ilchuk, G. A.
    Petrus', R. Yu.
    Rud', V. Yu.
    Rud', Yu. V.
    Serginov, M.
    SEMICONDUCTORS, 2009, 43 (09) : 1138 - 1141
  • [9] PHASE CHANGES IN IN2SE3
    NEWMAN, PC
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 299 (3-4): : 158 - 159
  • [10] Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers
    I. V. Bodnar
    G. A. Ilchuk
    R. Yu. Petrus’
    V. Yu. Rud’
    Yu. V. Rud’
    M. Serginov
    Semiconductors, 2009, 43 : 1138 - 1141