Bulkphotovoltaiceffectintwo-dimensionalferroelectricα-In2Se3

被引：0

作者：

Huiting WANG ^{[1
,2
]}

Shuaiqin WU ^{[1
,3
]}

Yan CHEN ^{[1
,3
]}

Qianru ZHAO ^{[1
,2
]}

Jinhua ZENG ^{[1
,2
]}

Ruotong YIN ^{[1
,2
]}

Yuqing ZHENG ^{[1
,2
]}

Chang LIU ^{[1
]}

Shukui ZHANG ^{[1
,4
]}

Tie LIN ^{[1
]}

Hong SHEN ^{[1
]}

Xiangjian MENG ^{[1
]}

Jun GE ^{[1
]}

Xudong WANG ^{[1
]}

Junhao CHU ^{[1
,2
,3
]}

Jianlu WANG ^{[1
,3
,5
]}

机构：

[1] State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University

[4] Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences

[5] Frontier Institute of Chip and System,Fudan

来源：

Science China(Information Sciences) | 2025年 / 68卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TB34 [功能材料];

学科分类号：

080501 ;

摘要：

Non-centrosymmetric material systems can generate spontaneous photocurrent without a p-n junction under uniform illumination, which is known as the bulk photovoltaic effect（BPVE）. It has garnered significant attention for its application potential in the fields of energy harvesting and photoelectric detection. In this study, we report the BPVE observed in twodimensional ferroelectric α-In2Se3 multilayer flakes. The reversal in spontaneous photocurrent polarity is observed and associated with the out-of-plane ferroelectric polarization direction. The spontaneous photocurrent originating from the shift current is also polarization-sensitive. The amplitude of spontaneous photocurrent is further increased by one order of magnitude through vacuum annealing. Our results provide a further application potential for new-generation photodetectors based on BPVE with low power consumption and multi-dimensional optoelectronic detection.

引用

页码：285 / 292

页数：8

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