Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

被引：10

作者：

Kaganer, Vladimir ^{[1
]}

Ulyanenkova, Tatjana ^{[2
]}

Benediktovitch, Andrei ^{[3
]}

Myronov, Maksym ^{[4
]}

Ulyanenkov, Alex ^{[5
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] Rigaku Europe SE, Hardwald 11, D-76275 Ettlingen, Germany

[3] Atomicus OOO, Mogilevskaya Str 39a-530, Minsk 220007, BELARUS

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[5] Atomicus GmbH, Schoemperlen Str 12a, D-76185 Karlsruhe, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 10期

关键词：

SURFACE-MORPHOLOGY; CROSS-HATCH; LATTICE MISMATCH; LAYERS; DENSITIES; PATTERN; SILICON; STRAIN; GAAS;

D O I：

10.1063/1.4990135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The experimental x-ray diffraction patterns of a Si0.4Ge0.6/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60 degrees dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation. Published by AIP Publishing.

引用

页数：6

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