Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

被引：13

作者：

Bonaedy, Taufik ^{[1
,2
]}

Choi, Jun Woo ^{[1
,2
]}

Jang, Chaun ^{[1
]}

Min, Byoung-Chul ^{[1
,2
]}

Chang, Joonyeon ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea

[2] Univ Sci & Technol, Dept Nanomat Sci & Engn, Taejon 305350, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 22期

基金：

新加坡国家研究基金会;

关键词：

spintronics; magnetic anisotropy; electric field control of magnetism; ATOMIC LAYERS;

D O I：

10.1088/0022-3727/48/22/225002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/MgO/Co40Fe40B20 and Co40Fe40B20/Hf (0.08 nm)/MgO/Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/Hf/MgO/Co40Fe40B20 compared to Co40Fe40B20/MgO/Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect.

引用

页数：6

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