Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

被引：13
|
作者：
Bonaedy, Taufik [1 ,2 ]
Choi, Jun Woo [1 ,2 ]
Jang, Chaun [1 ]
Min, Byoung-Chul [1 ,2 ]
Chang, Joonyeon [1 ]
机构：
[1] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea
[2] Univ Sci & Technol, Dept Nanomat Sci & Engn, Taejon 305350, South Korea
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
spintronics; magnetic anisotropy; electric field control of magnetism; ATOMIC LAYERS;
D O I：
10.1088/0022-3727/48/22/225002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/MgO/Co40Fe40B20 and Co40Fe40B20/Hf (0.08 nm)/MgO/Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/Hf/MgO/Co40Fe40B20 compared to Co40Fe40B20/MgO/Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect.
引用
收藏
页数：6
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