MIM-type cell selector for high-density and low-power cross-point memory application

被引：13

作者：

Shin, Jungho ^{[1
]}

Choi, Godeuni ^{[1
]}

Woo, Jiyong ^{[1
]}

Park, Jubong ^{[1
]}

Park, Sangsu

Lee, Wootae ^{[1
]}

Kim, Seonghyun ^{[1
]}

Son, Myungwoo

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 93卷

基金：

新加坡国家研究基金会;

关键词：

Resistive memory (RRAM); Cross-point array; Cell selector; Readout margin; Power consumption; SPEED;

D O I：

10.1016/j.mee.2011.12.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A resistive memory can be highly integrated using a cross-point architecture; however, it requires appropriate cell selectors in order to suppress sneak paths and reduce power dissipation. In this paper, we study the effect of cell selectors on the readout margin and power dissipation in the read operation. A cell selector (Pt/TiOx/Pt) and a resistive memory (Mo/SiOx/Pt) were fabricated, and the electrical I-V characteristics were examined after connecting these two devices in series. On the basis of the I-V measurements, the readout margin and power dissipation of a cross-point array were calculated depending on the existence and characteristics of the selector. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：81 / 84

页数：4

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