High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

被引：0
|
作者：
Zhi-Ying Yu
Jia-Yi Zhao
Guo-Kun Ma
Ao Chen
Da-Lei Chen
Yi-Heng Rao
Hao Wang
机构：
[1] Hubei Yangtze Memory Laboratories,School of Microelectronic
[2] Hubei University,School of Physics and Technology
[3] Wuhan University,undefined
来源：
Rare Metals | 2022年 / 41卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3671 / 3676
页数：5
相关论文
共 50 条
  • [1] High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications
    Yu, Zhi-Ying
    Zhao, Jia-Yi
    Ma, Guo-Kun
    Chen, Ao
    Chen, Da-Lei
    Rao, Yi-Heng
    Wang, Hao
    RARE METALS, 2022, 41 (11) : 3671 - 3676
  • [2] High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications
    Zhi-Ying Yu
    Jia-Yi Zhao
    Guo-Kun Ma
    Ao Chen
    Da-Lei Chen
    Yi-Heng Rao
    Hao Wang
    Rare Metals, 2022, 41 (11) : 3671 - 3676
  • [3] 1S1R device with self-compliance property for high density cross-point memory applications
    Li, Xinyi
    Wu, Huaqiang
    Deng, Ning
    Qian, He
    2015 15TH NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2015,
  • [4] Advanced process technologies of 1S1R for High Density Cross Point ReRAM
    Kim, Beom Yong
    Kim, Hyeong Soo
    2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015,
  • [5] One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory Applications
    Huang, Jiun-Jia
    Tseng, Yi-Ming
    Luo, Wun-Cheng
    Hsu, Chung-Wei
    Hou, Tuo-Hung
    2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [6] 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays
    Ahn, Chiyui
    Jiang, Zizhen
    Lee, Chi-Shuen
    Chen, Hong-Yu
    Liang, Jiale
    Liyanage, Luckshitha S.
    Wong, H. -S. Philip
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (07) : 2197 - 2204
  • [7] Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications
    Lee, Joonmyoung
    Shin, Jungho
    Lee, Daeseok
    Lee, Wootae
    Jung, Seungjae
    Jo, Minseok
    Park, Jubong
    Biju, Kuyyadi P.
    Kim, Seonghyun
    Park, Sangsu
    Hwang, Hyunsang
    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
  • [8] Threshold Switching Selector and 1S1R Integration Development for 3D Cross-point STT-MRAM
    Yang, Hongxin
    Hao, Xiaojie
    Wang, Zihui
    Malmhall, Roger
    Gan, Huadong
    Satoh, Kimihiro
    Zhang, Jing
    Jung, Dong Ha
    Wang, Xiaobin
    Zhou, Yuchen
    Yen, Bing K.
    Huai, Yiming
    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
  • [9] NbO2-based Low Power and Cost Effective 1S1R Switching for High Density Cross Point ReRAM Application
    Kim, Wan Gee
    Lee, Hyun Min
    Kim, Beom Yong
    Jung, Kyoo Ho
    Seong, Tae Geun
    Kim, Seonghyun
    Jung, Ha Chang
    Kim, Hyo June
    Yoo, Jong Hee
    Lee, Hyung Dong
    Kim, Soo Gil
    Chung, Suock
    Lee, Kee Jeung
    Lee, Jung Hoon
    Kim, Hyeong Soo
    Lee, Seok Hee
    Yang, Jianhua
    Jeon, Yoocharn
    Williams, R. Stanley
    2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS, 2014,
  • [10] MIM-type cell selector for high-density and low-power cross-point memory application
    Shin, Jungho
    Choi, Godeuni
    Woo, Jiyong
    Park, Jubong
    Park, Sangsu
    Lee, Wootae
    Kim, Seonghyun
    Son, Myungwoo
    Hwang, Hyunsang
    MICROELECTRONIC ENGINEERING, 2012, 93 : 81 - 84
12345