High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

被引：0
|
作者：
Zhi-Ying Yu
Jia-Yi Zhao
Guo-Kun Ma
Ao Chen
Da-Lei Chen
Yi-Heng Rao
Hao Wang
机构：
[1] Hubei Yangtze Memory Laboratories,School of Microelectronic
[2] Hubei University,School of Physics and Technology
[3] Wuhan University,undefined
来源：
Rare Metals | 2022年 / 41卷
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页码：3671 / 3676
页数：5
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