Characterization of switching properties of lead-zirconate-titanate thin films in Ti-rich phase

被引:11
|
作者
Aoki, K [1 ]
Sakoda, T [1 ]
Fukuda, Y [1 ]
机构
[1] Texas Instruments Inc, Tsukuba Res & Dev Ctr Ltd, Tsukuba, Ibaraki 305, Japan
来源
关键词
PZT; Ti/Zr ratio; remanent polarization; switching; Sawyer-Tower circuit;
D O I
10.1143/JJAP.37.L522
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching behaviors of lead-zirconate-titanate thin-film capacitors with Ti/Zr ratios of 60/40 and 75/25 were successfully characterized by observing their switching transient currents. The capacitor with 60/40 showed the remanent polarization density of 24.0 mu/cm(2) independent of the frequency of the external switching biases. On the other hand, the remanent polarization density of the capacitor with 75/25 was reduced markedly with increasing the frequency. The remanent polarization density was lowered from 23.6 mu C/cm(2) at 100 Hz to 13.0 mu C/cm(2) at 12.5 kHz. While the switching transient currents were observed as a function of time, the lead-zirconate-titanate thin-film capacitor with 60/40 showed the typical sharp switching transient current, in sharp contrast, the capacitor with 75/25 ratio showed a monotonous transient current which suggests the presence of ferroelectric domains having long time constants. Consequently, the lead-zirconate-titanate thin film with the Ti/Zr ratio of 60/40 showed better switching behavior as compared to that with the Ti/Zr ratio of 75/25.
引用
收藏
页码:L522 / L524
页数:3
相关论文
共 50 条
  • [1] Characterization of switching properties of lead-zirconate-titanate thin films in Ti-rich phase
    Texas Instruments Tsukuba Research, & Development Cent, Ltd, Ibaraki, Japan
    Jpn J Appl Phys Part 2 Letter, 5 A (L522-L524):
  • [2] Characterization of sputtered lead-zirconate-titanate thin films with various compositions
    Sakoda, Tomoyuki
    Aoki, Katsuhiro
    Fukuda, Yukio
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (6 A): : 3600 - 3603
  • [3] Characterization of sputtered lead-zirconate-titanate thin films with various compositions
    Sakoda, T
    Aoki, K
    Fukuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3600 - 3603
  • [4] Microstructural characterization of sol-gel lead-zirconate-titanate thin films
    Impey, SA
    Huang, Z
    Patel, A
    Beanland, R
    Shorrocks, NM
    Watton, R
    Whatmore, RW
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 2202 - 2208
  • [5] EPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS ON SAPPHIRE
    BRAUN, W
    KWAK, BS
    ERBIL, A
    BUDAI, JD
    WILKENS, BJ
    APPLIED PHYSICS LETTERS, 1993, 63 (04) : 467 - 469
  • [6] PREPARATION AND CHARACTERIZATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY DC REACTIVE COSPUTTERING
    CHO, NH
    KIM, HG
    INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 345 - 353
  • [7] Pulsed excimer laser deposition and characterization of ferroelectric lead-zirconate-titanate thin films
    陈逸清
    郑立荣
    张顺开
    林成鲁
    邹世昌
    ChineseScienceBulletin, 1995, (04) : 340 - 344
  • [8] PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY REACTIVE EVAPORATION
    TORII, K
    SAITOH, S
    OHJI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5287 - 5290
  • [9] Electrode dependences of switching endurance properties of lead-zirconate-titanate thin-film capacitors
    Aoki, K
    Fukuda, Y
    Numata, K
    Nishimura, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A): : 2210 - 2215
  • [10] FLUORINE ION ETCHING OF LEAD-ZIRCONATE-TITANATE THIN-FILMS
    LAU, WM
    BELLO, I
    SAYER, M
    ZOU, LC
    APPLIED PHYSICS LETTERS, 1994, 64 (03) : 300 - 305