EPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS ON SAPPHIRE

Pb(Zr1-xTix) O3 thin films covering the whole compositional range x = 0 to x = 1 have been grown for the first time on the sapphire (1102BAR) plane using the metalorganic chemical vapor deposition technique. The films are three-dimensionally epitaxial and exhibit single crystal properties. The structural transitions, examined by x-ray diffraction, are shifted slightly from the bulk single crystal values. Ferroelectric P-E hysteresis curves and the dielectric constant of the films were investigated using interdigitated electrodes fabricated by photolithography.