Characterization of switching properties of lead-zirconate-titanate thin films in Ti-rich phase

被引:11
|
作者
Aoki, K [1 ]
Sakoda, T [1 ]
Fukuda, Y [1 ]
机构
[1] Texas Instruments Inc, Tsukuba Res & Dev Ctr Ltd, Tsukuba, Ibaraki 305, Japan
来源
关键词
PZT; Ti/Zr ratio; remanent polarization; switching; Sawyer-Tower circuit;
D O I
10.1143/JJAP.37.L522
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching behaviors of lead-zirconate-titanate thin-film capacitors with Ti/Zr ratios of 60/40 and 75/25 were successfully characterized by observing their switching transient currents. The capacitor with 60/40 showed the remanent polarization density of 24.0 mu/cm(2) independent of the frequency of the external switching biases. On the other hand, the remanent polarization density of the capacitor with 75/25 was reduced markedly with increasing the frequency. The remanent polarization density was lowered from 23.6 mu C/cm(2) at 100 Hz to 13.0 mu C/cm(2) at 12.5 kHz. While the switching transient currents were observed as a function of time, the lead-zirconate-titanate thin-film capacitor with 60/40 showed the typical sharp switching transient current, in sharp contrast, the capacitor with 75/25 ratio showed a monotonous transient current which suggests the presence of ferroelectric domains having long time constants. Consequently, the lead-zirconate-titanate thin film with the Ti/Zr ratio of 60/40 showed better switching behavior as compared to that with the Ti/Zr ratio of 75/25.
引用
收藏
页码:L522 / L524
页数:3
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