Switching behaviors of lead-zirconate-titanate thin-film capacitors with Ti/Zr ratios of 60/40 and 75/25 were successfully characterized by observing their switching transient currents. The capacitor with 60/40 showed the remanent polarization density of 24.0 mu/cm(2) independent of the frequency of the external switching biases. On the other hand, the remanent polarization density of the capacitor with 75/25 was reduced markedly with increasing the frequency. The remanent polarization density was lowered from 23.6 mu C/cm(2) at 100 Hz to 13.0 mu C/cm(2) at 12.5 kHz. While the switching transient currents were observed as a function of time, the lead-zirconate-titanate thin-film capacitor with 60/40 showed the typical sharp switching transient current, in sharp contrast, the capacitor with 75/25 ratio showed a monotonous transient current which suggests the presence of ferroelectric domains having long time constants. Consequently, the lead-zirconate-titanate thin film with the Ti/Zr ratio of 60/40 showed better switching behavior as compared to that with the Ti/Zr ratio of 75/25.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast
Beshenkov V.G.
Znamenskii A.G.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast
Znamenskii A.G.
Irzhak A.V.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast
Irzhak A.V.
Marchenko V.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblastInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast