Sorption and gas sensitive properties of In2O3 based ceramics doped with Ga2O3

被引：23
|
作者：
Ratko, A
Babushkin, O [1 ]
Baran, A
Baran, S
机构：
[1] Lulea Univ Technol, Div Mat Sci, S-95187 Lulea, Sweden
[2] Inst Gen & Inorgan Chem, Minsk 220072, BELARUS
[3] Pharmec Ltd, Minsk, BELARUS
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1998年 / 18卷 / 14期
关键词：
D O I：
10.1016/S0955-2219(98)00138-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The process of structure formation in In2O3 based ceramics doped with Ga2O3 was investigated. The data obtained demonstrated the profound influence of Ga-dopands both on the crystallization path of solids produced by coprecipitation and on their final physical and electrical properties. The limited solubility of Ga2O3 dopands in cubic In2O3 lattice which lies within the 11-12 wt% was also noted. Ga2O3-dopands caused the formation of a porous structure in the In2O3-based ceramics, providing an active interaction surface in the semiconductor for reducing gases. Ga-doped ceramics demonstrated better gas sensor properties then pure In2O3. (C) 1998 Elsevier Science Limited. All rights reserved.
引用
收藏
页码：2227 / 2232
页数：6
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