Sorption and gas sensitive properties of In2O3 based ceramics doped with Ga2O3

被引：23

作者：

Ratko, A

Babushkin, O ^{[1
]}

Baran, A

Baran, S

机构：

[1] Lulea Univ Technol, Div Mat Sci, S-95187 Lulea, Sweden

[2] Inst Gen & Inorgan Chem, Minsk 220072, BELARUS

[3] Pharmec Ltd, Minsk, BELARUS

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1998年 / 18卷 / 14期

关键词：

D O I：

10.1016/S0955-2219(98)00138-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The process of structure formation in In2O3 based ceramics doped with Ga2O3 was investigated. The data obtained demonstrated the profound influence of Ga-dopands both on the crystallization path of solids produced by coprecipitation and on their final physical and electrical properties. The limited solubility of Ga2O3 dopands in cubic In2O3 lattice which lies within the 11-12 wt% was also noted. Ga2O3-dopands caused the formation of a porous structure in the In2O3-based ceramics, providing an active interaction surface in the semiconductor for reducing gases. Ga-doped ceramics demonstrated better gas sensor properties then pure In2O3. (C) 1998 Elsevier Science Limited. All rights reserved.

引用

页码：2227 / 2232

页数：6

共 50 条

[21] Nano-structured phases of gallium oxide (GaOOH, α-Ga2O3, β-Ga2O3, γ-Ga2O3, δ-Ga2O3, and ε-Ga2O3): fabrication, structural, and electronic structure investigations
Sharma, Aditya
Varshney, Mayora
Saraswat, Himani
Chaudhary, Surekha
Parkash, Jai
Shin, Hyun-Joon
Chae, Keun-Hwa
Won, Sung-Ok
INTERNATIONAL NANO LETTERS, 2020, 10 (01) : 71 - 79
[22] Nano-structured phases of gallium oxide (GaOOH, α-Ga2O3, β-Ga2O3, γ-Ga2O3, δ-Ga2O3, and ε-Ga2O3): fabrication, structural, and electronic structure investigations
Aditya Sharma
Mayora Varshney
Himani Saraswat
Surekha Chaudhary
Jai Parkash
Hyun-Joon Shin
Keun-Hwa Chae
Sung-Ok Won
International Nano Letters, 2020, 10 : 71 - 79
[23] Trapping Effects in Si δ-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
McGlone, Joe F.
Xia, Zhanbo
Zhang, Yuewei
Joishi, Chandan
Lodha, Saurabh
Rajan, Siddharth
Ringel, Steven A.
Arehart, Aaron R.
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) : 1042 - 1045
[24] Properties of Ga2O3/Ga2O3:Sn/CIGS for visible light sensors
Kikuchi, K.
Imura, S.
Miyakawa, K.
Ohtake, H.
Kubota, M.
6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, 2015, 619
[25] Investigations in the β-Ga2O3/In2O3 system:: crystal growth of solid solutions
Patzke, G
Binnewies, M
SOLID STATE SCIENCES, 2000, 2 (07) : 689 - 699
[26] X-ray photoelectron spectroscopy study for band alignments of BaTiO3/Ga2O3 and In2O3/Ga2O3 heterostructures
Zhi, Yusong
Liu, Zeng
Wang, Xia
Li, Sisi
Wang, Xiaolong
Chu, Xulong
Li, Peigang
Guo, Daoyou
Wu, Zhenping
Tang, Weihua
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (02):
[27] Optical properties of Ga2O3 doped ZnO nanoribbons
Stoehr, M
Juillaguet, S
Kyaw, TM
Wen, JG
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4, 2005, 2 (04): : 1314 - 1318
[28] Self-assembly and hierarchical organization of Ga2O3/In2O3 nanostructures
Xu, Liang
Su, Yong
Li, Sen
Chen, Yiqing
Zhou, Qingtao
Yin, Song
Feng, Yi
JOURNAL OF PHYSICAL CHEMISTRY B, 2007, 111 (04): : 760 - 766
[29] 氨化Si基Ga2O3/In2O3制备GaN薄膜
薛成山
王福学
庄惠照
张晓凯
艾玉杰
孙丽丽
陈金华
秦丽霞
功能材料, 2007, (10) : 1632 - 1634
[30] Effect of WO3 or Ga2O3 Addition on the Phase Evolution and Properties of Y2O3-Doped AlN Ceramics
Shin, Hyunho
Yoon, Sang-Ok
Kim, Shin
Hwang, Injoon
JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2013, 50 (03) : 206 - 211

← 1 2 3 4 5 →