Towards single electron transistor-based photon detection with microplasma-enabled graphene quantum dots

被引：8

作者：

Yeh, Pei-Chun ^{[1
]}

Ohkatsu, Genki ^{[2
]}

Toyama, Ryo ^{[2
]}

Phan Trong Tue ^{[2
]}

Ostrikov, Kostya ^{[3
,4
]}

Majima, Yutaka ^{[2
]}

Chiang, Wei-Hung ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci Technol, Dept Chem Engn, Taipei 10607, Taiwan

[2] Tokyo Inst Technol, Inst Innovat Res, Lab Mat & Struct, Yokohama, Kanagawa 2268503, Japan

[3] Queensland Univ Technol QUT, Sch Chem & Phys, Brisbane, Qld 4000, Australia

[4] Queensland Univ Technol QUT, QUT Ctr Mat Sci, Brisbane, Qld 4000, Australia

来源：

NANOTECHNOLOGY | 2021年 / 32卷 / 50期

关键词：

transistor; graphene quantum dots; plasmas; synthesis; photon detection;

D O I：

10.1088/1361-6528/ac2845

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.

引用

页数：6

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