Towards single electron transistor-based photon detection with microplasma-enabled graphene quantum dots

被引:8
|
作者
Yeh, Pei-Chun [1 ]
Ohkatsu, Genki [2 ]
Toyama, Ryo [2 ]
Phan Trong Tue [2 ]
Ostrikov, Kostya [3 ,4 ]
Majima, Yutaka [2 ]
Chiang, Wei-Hung [1 ]
机构
[1] Natl Taiwan Univ Sci Technol, Dept Chem Engn, Taipei 10607, Taiwan
[2] Tokyo Inst Technol, Inst Innovat Res, Lab Mat & Struct, Yokohama, Kanagawa 2268503, Japan
[3] Queensland Univ Technol QUT, Sch Chem & Phys, Brisbane, Qld 4000, Australia
[4] Queensland Univ Technol QUT, QUT Ctr Mat Sci, Brisbane, Qld 4000, Australia
关键词
transistor; graphene quantum dots; plasmas; synthesis; photon detection;
D O I
10.1088/1361-6528/ac2845
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.
引用
收藏
页数:6
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