Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers

被引：44

作者：

Marchl, Marco ^{[2
]}

Edler, Matthias ^{[1
]}

Haase, Anja ^{[3
]}

Fian, Alexander ^{[3
]}

Trimmel, Gregor ^{[4
]}

Griesser, Thomas ^{[1
]}

Stadlober, Barbara ^{[3
]}

Zojer, Egbert ^{[2
]}

机构：

[1] Univ Leoben, Inst Chem Polymer Mat, A-8700 Leoben, Austria

[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria

[4] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 47期

基金：

奥地利科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; RING OSCILLATORS; CIRCUITS; MONOLAYERS; MATRIX; SHIFT;

D O I：

10.1002/adma.201002912

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin-film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p-type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.

引用

页码：5361 / +

页数：6

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