Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers

被引：44

作者：

Marchl, Marco ^{[2
]}

Edler, Matthias ^{[1
]}

Haase, Anja ^{[3
]}

Fian, Alexander ^{[3
]}

Trimmel, Gregor ^{[4
]}

Griesser, Thomas ^{[1
]}

Stadlober, Barbara ^{[3
]}

Zojer, Egbert ^{[2
]}

机构：

[1] Univ Leoben, Inst Chem Polymer Mat, A-8700 Leoben, Austria

[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria

[4] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 47期

基金：

奥地利科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; RING OSCILLATORS; CIRCUITS; MONOLAYERS; MATRIX; SHIFT;

D O I：

10.1002/adma.201002912

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin-film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p-type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.

引用

页码：5361 / +

页数：6

共 50 条

[31] Mechanistic Analysis of Embedded Copper Oxide in Organic Thin-Film Transistors with Controllable Threshold Voltage
Nie, Guozheng
Dong, Biao
Wu, Shaobing
Zhan, Shiping
Xu, Ying
Sheng, Wei
Liu, Yunxin
Wu, Xiaofeng
ACS OMEGA, 2019, 4 (05): : 8506 - 8511
[32] Threshold Voltage Extraction in the Saturation Regime Insensitive to the Contact Properties for Organic Thin-Film Transistors
Cui, Qingyu
Gu, Cheng
Liu, Jie
Feng, Linrun
Wang, Sui-Dong
Guo, Xiaojun
JOURNAL OF DISPLAY TECHNOLOGY, 2014, 10 (07): : 615 - 618
[33] Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors
Im, S. (semicon@yonsei.ac.kr), 1600, American Institute of Physics Inc. (96):
[34] Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors
Pruefer, Jakob
Simon Leise, Jakob
Darbandy, Ghader
Borchert, James W.
Klauk, Hagen
Iniguez, Benjamn
Gneiting, Thomas
Kloes, Alexander
PROCEEDINGS OF THE 2019 26TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2019), 2019, : 71 - 75
[35] Organic Thin-Film Transistors with Low Threshold Voltage Variation on Low-Temperature Substrates
Gowrisanker, S.
Ai, Y.
Jia, H.
Quevedo-Lopez, M. A.
Alshareef, H. N.
Trachtenberg, I.
Stiegler, H.
Edwards, H.
Barnett, R.
Gnade, B. E.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (03) : H50 - H53
[36] Synthesis of Ultrathin, Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin-Film Transistors
Pak, Kwanyong
Seong, Hyejeong
Choi, Junhwan
Hwang, Wan Sik
Im, Sung Gap
ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (36) : 6574 - 6582
[37] Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes
Kitamura, Masatoshi
Kuzumoto, Yasutaka
Aomori, Shigeru
Kamura, Masakazu
Na, Jong Ho
Arakawa, Yasuhiko
APPLIED PHYSICS LETTERS, 2009, 94 (08)
[38] A New Definition of the Threshold Voltage for Amorphous InGaZnO Thin-Film Transistors
Qiang, Lei
Yao, Ruohe
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (07) : 2394 - 2397
[39] Comparative study on extraction methods of threshold voltage for thin-film transistors
Bai, Ziheng
Shi, Xuewen
Wang, Jiawei
Lu, Nianduan
Duan, Xinlv
Yang, Guanhua
Dong, Chaofang
Xiao, Kui
Li, Ling
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2019, 27 (12) : 816 - 821
[40] THRESHOLD VOLTAGE SHIFT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
TSUKADA, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C341 - C341

← 1 2 3 4 5 →