Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers

被引：44
|
作者：
Marchl, Marco [2 ]
Edler, Matthias [1 ]
Haase, Anja [3 ]
Fian, Alexander [3 ]
Trimmel, Gregor [4 ]
Griesser, Thomas [1 ]
Stadlober, Barbara [3 ]
Zojer, Egbert [2 ]
机构：
[1] Univ Leoben, Inst Chem Polymer Mat, A-8700 Leoben, Austria
[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria
[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria
[4] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria
来源：
ADVANCED MATERIALS | 2010年 / 22卷 / 47期
基金：
奥地利科学基金会;
关键词：
FIELD-EFFECT TRANSISTORS; RING OSCILLATORS; CIRCUITS; MONOLAYERS; MATRIX; SHIFT;
D O I：
10.1002/adma.201002912
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin-film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p-type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.
引用
收藏
页码：5361 / +
页数：6
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