Degradation and recovery of polarization under γ rays in Bi3.15Nd0.85Ti3O12 ferroelectric capacitors

被引：1

作者：

Liu, Tian-zhi ^{[1
]}

Zhang, Zhi-gang ^{[1
]}

Xie, Dan ^{[1
]}

Dong, Yaoqi ^{[1
]}

Ren, Tian-ling ^{[1
]}

Liu, Li-tian ^{[1
]}

Zhu, Jun ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2008年 / 98卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ferroelectric; BNdT; irradiation; fatigue;

D O I：

10.1080/10584580802092472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bi3.15Nd0.85Ti3O12 thin films of mixed orientations were grown on Pt/Ti/SiO2/Si substrates using the sol-gel method. The film annealed at 750 degrees C is composed of grains with sizes of 450 nm. The samples were exposed on different doses of gamma rays. The polarization of the films shows the degradation after irradiation. The remnant polarization decreased from 15 mu C/cm(2) to 7.4-9.8 mu C/cm(2) at an applied voltage of 8 V. This degradation can be recovered partially to 11 mu C/cm(2) by anneal in O-2 ambition. The irradiated capacitors did not show any significant fatigue up to 5 x 10(10) circles at frequency of 1 MHz.

引用

页码：105 / 112

页数：8

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