Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

被引：8

作者：

Egorkin, V. I. ^{[1
]}

Zhuravlev, M. N. ^{[1
]}

Kapaev, V. V. ^{[2
]}

机构：

[1] Tech Univ, Moscow State Inst Elect Engn, Moscow, Russia

[2] Russian Acad Sci, Lebedev Phys Inst, Moscow, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 13期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1134/S1063782611130100

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A numerical method for electron transport calculations in resonant-tunneling GaN/AlGaN heterostructures has been developed on the basis of a self-consistent solution of the Schrodinger and Poisson equations. Dependences of the system's transmission coefficient on the external field and of the peak current on the ratio between the well and barrier widths have been studied for a double-barrier resonant-tunneling diode. For technical applications, the optimal values of the structure's parameters have been found.

引用

页码：1638 / 1641

页数：4

共 50 条

[41] Electron transport through cubic InGaN/AlGaN resonant tunneling diodes
Yahyaoui, N.
Sfina, N.
Abdi-Ben Nasrallah, S.
Lazzari, J. -L.
Said, M.
COMPUTER PHYSICS COMMUNICATIONS, 2014, 185 (12) : 3119 - 3126
[42] Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
Nath, D. N.
Yang, Z. C.
Lee, C-Y.
Park, P. S.
Wu, Y-R.
Rajan, S.
APPLIED PHYSICS LETTERS, 2013, 103 (02)
[43] RESONANT-TUNNELING WITH AN ELECTRON-PHONON INTERACTION
HYLDGAARD, P
HERSHFIELD, S
DAVIES, JH
WILKINS, JW
ANNALS OF PHYSICS, 1994, 236 (01) : 1 - 42
[44] Transport properties in resonant tunneling heterostructures
Presilla, C
Sjostrand, J
JOURNAL OF MATHEMATICAL PHYSICS, 1996, 37 (10) : 4816 - 4844
[45] Transport properties in resonant tunneling heterostructures
J Math Phys, 10 (4816):
[46] REALIZATION OF A NOVEL RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR - COMPETITION OF ULTRAFAST RESONANT-TUNNELING AND ENERGY RELAXATION
YANG, CH
WILSON, RA
SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 805 - 807
[47] Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Kaun, Stephen W.
Burke, Peter G.
Wong, Man Hoi
Kyle, Erin C. H.
Mishra, Umesh K.
Speck, James S.
APPLIED PHYSICS LETTERS, 2012, 101 (26)
[48] High field transport in GaN/AlGaN heterostructures
Barker, JM
Ferry, DK
Goodnick, SM
Koleske, DD
Allerman, A
Shul, RJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2045 - 2050
[49] Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
Cao, JC
Yao, W
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 50 - 53
[50] Linear and Nonlinear Electron Transport in Modulation-Doped AlGaN/GaN Heterostructures
Cao, J.C., 1600, Japan Society of Applied Physics (43):

← 1 2 3 4 5 →