Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

被引：8

作者：

Egorkin, V. I. ^{[1
]}

Zhuravlev, M. N. ^{[1
]}

Kapaev, V. V. ^{[2
]}

机构：

[1] Tech Univ, Moscow State Inst Elect Engn, Moscow, Russia

[2] Russian Acad Sci, Lebedev Phys Inst, Moscow, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 13期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1134/S1063782611130100

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A numerical method for electron transport calculations in resonant-tunneling GaN/AlGaN heterostructures has been developed on the basis of a self-consistent solution of the Schrodinger and Poisson equations. Dependences of the system's transmission coefficient on the external field and of the peak current on the ratio between the well and barrier widths have been studied for a double-barrier resonant-tunneling diode. For technical applications, the optimal values of the structure's parameters have been found.

引用

页码：1638 / 1641

页数：4

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