Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

被引：77

作者：

Shivaraman, Shriram ^{[1
]}

Herman, Lihong H. ^{[2
]}

Rana, Farhan ^{[1
]}

Park, Jiwoong ^{[3
]}

Spencer, Michael G. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 18期

基金：

美国国家科学基金会;

关键词：

METAL-SEMICONDUCTOR INTERFACES; ELECTRONIC-PROPERTIES; CONTACTS; DIODES; GRAPHITE;

D O I：

10.1063/1.4711769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we study electron transport across the heterojunction interface of epitaxial few-layer graphene grown on silicon carbide and the underlying substrate. The observed Schottky barrier is characterized using current-voltage, capacitance-voltage and photocurrent spectroscopy techniques. It is found that the graphene/SiC heterojunction cannot be characterized by a single unique barrier height because of lateral barrier inhomogeneities. A Gaussian distribution of barrier heights with a mean barrier height phi(Bm) - 1.06 eV and standard deviation sigma - 137 +/- 11 meV explains the experimental data quite well. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711769]

引用

页数：4

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