Study on Hole Effective Mass of Strained Si1-xGex/(101)Si

被引：0

作者：

Song, JianJun ^{[1
]}

Zhang, HeMing ^{[1
]}

Hu, HuiYong ^{[1
]}

Xuan, RongXi ^{[1
]}

Dai, XianYing ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian, Peoples R China

来源：

2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年

关键词：

strained Si1-xGex; hole effective mass; PMOS; BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using K.P method with the help of perturbation theory, the arbitrary k wave vector directional hole effective masses in strained Si1-xGex/(101)Si were obtained. It is found that the more obvious anisotropy of the hole effective mass occurs in strained Si1-xGex on (101) Si substrate and that the [010] directional hole effective mass decreases obviously under strain, compared with the one in relaxed Si. The results above can supply valuable references to the design of the Si-based strained PMOS devices

引用

页码：362 / +

页数：2

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