A PVT Invariant Cascode Current Reference Circuit in 180nm CMOS Process

被引:2
|
作者
Swathi, Payavula [1 ]
Bhaskar, M. [1 ]
机构
[1] NIT, RF IC Design Lab, ECE Dept, Tiruchirappalli, India
关键词
PVT invariant; 180nm; two-step compensation biasing; triode transistor; cascode structure;
D O I
10.1109/ICSE56004.2022.9863156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a PVT invariant cascode current reference circuit implemented in UMC 180 nm CMOS process. In the proposed design the process compensation is achieved by a two-step compensation biasing circuit. The temperature compensation is achieved by the triode transistor and voltage dependency is reduced by cascode structure. The simulations of the circuit are carried out using the Cadence Virtuoso tool. From the simulations, it is observed that the reference current value of the circuit is 12.42 mu A with the measured temperature coefficient (TC) of 1161ppm/degrees C in the range of -40 degrees C to 100 degrees C, process variation of +/- 6.03 %, and power supply dependency of +/- 4.42 % which is good as compared to the current reference circuits proposed in the literature. The proposed circuit is suitable for easy integration into other CMOS circuits as a reliable current source.
引用
收藏
页码:113 / 116
页数:4
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