A PVT Invariant Cascode Current Reference Circuit in 180nm CMOS Process

被引:2
|
作者
Swathi, Payavula [1 ]
Bhaskar, M. [1 ]
机构
[1] NIT, RF IC Design Lab, ECE Dept, Tiruchirappalli, India
关键词
PVT invariant; 180nm; two-step compensation biasing; triode transistor; cascode structure;
D O I
10.1109/ICSE56004.2022.9863156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a PVT invariant cascode current reference circuit implemented in UMC 180 nm CMOS process. In the proposed design the process compensation is achieved by a two-step compensation biasing circuit. The temperature compensation is achieved by the triode transistor and voltage dependency is reduced by cascode structure. The simulations of the circuit are carried out using the Cadence Virtuoso tool. From the simulations, it is observed that the reference current value of the circuit is 12.42 mu A with the measured temperature coefficient (TC) of 1161ppm/degrees C in the range of -40 degrees C to 100 degrees C, process variation of +/- 6.03 %, and power supply dependency of +/- 4.42 % which is good as compared to the current reference circuits proposed in the literature. The proposed circuit is suitable for easy integration into other CMOS circuits as a reliable current source.
引用
收藏
页码:113 / 116
页数:4
相关论文
共 50 条
  • [31] A 2.4GHz CMOS GILBERT MIXER IN 180nm TECHNOLOGY
    Ghayvat, H.
    Bandil, L.
    Mukhopadhyay, S. C.
    Gupta, R.
    2015 FIFTH INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS AND NETWORK TECHNOLOGIES (CSNT2015), 2015, : 781 - 785
  • [32] Quantitative detection system for immunostrips in 180nm standard CMOS technology
    Tekin, Engincan
    Celikdemir, Caner
    Ucar, Busra
    Gul, Ozgur
    Sarioglu, Baykal
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2021, 106 (03) : 493 - 500
  • [33] Monolithic 180nm CMOS Controlled GHz Ultrasonic Impedance Sensing and Imaging
    Abdelmejeed, Mamdouh
    Ravi, Adarsh
    Liu, Yutong
    Kuo, Justin
    Sharma, Jaibir
    Merugu, Srinivas
    Singh, Navab
    Lal, Amit
    2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,
  • [34] Power Efficient Voltage Controlled Oscillator Design in 180nm CMOS Technology
    Gupta, Prachi
    Kumar, Manoj
    2017 IEEE INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND AUTOMATION (ICCCA), 2017, : 1470 - 1476
  • [35] Silicon Neuron-Analog CMOS VLSI Implementation and Analysis at 180nm
    Srivastava, Sushma
    Rathod, S. S.
    PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) 2016, 2016, : 28 - 32
  • [36] Process and Temperature Invariant On-Chip Current Reference Circuit
    Siddiqi, Yasir
    Ahmed, Naveed
    Shahbaz, M. Aaquib
    Jawed, Syed Arsalan
    2017 FIRST INTERNATIONAL CONFERENCE ON LATEST TRENDS IN ELECTRICAL ENGINEERING AND COMPUTING TECHNOLOGIES (INTELLECT), 2017,
  • [37] A Thin-film SOI 180nm CMOS RF Switch Technology
    Botula, A.
    Joseph, A.
    Slinkman, J.
    Wolf, R.
    He, Z. X.
    Ioannou, D.
    Wagner, L.
    Gordon, M.
    Abou-Khalil, M.
    Phelps, R.
    Gautsch, M.
    Abadeer, W.
    Harmon, D.
    Levy, M.
    Benoit, J.
    Dunn, J.
    2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS, 2009, : 152 - 155
  • [38] ASK-Modulator Design of RFID Tag in 180nm CMOS Technology
    El Boutahiri, Abdelali
    El Khadiri, Karim
    Qjidaa, Hassan
    Aarab, Abdellah
    El Alami, Rachid
    Zenkouar, Lahbib
    2018 INTERNATIONAL CONFERENCE ON INTELLIGENT SYSTEMS AND COMPUTER VISION (ISCV2018), 2018,
  • [39] Novel Low Power Full Adder Cells in 180nm CMOS Technology
    Wang, Dan
    Yang, Maofeng
    Cheng, Wu
    Guan, Xuguang
    Zhu, Zhangming
    Yang, Yintang
    ICIEA: 2009 4TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS, VOLS 1-6, 2009, : 425 - 428
  • [40] NRSD8-Neural Recording and Spike Detection Multichannel Integrated Circuit Designed in 180nm CMOS Technology
    Kmon, Piotr
    MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013, 2013, : 255 - 258