A two-level prediction model for deep reactive ion etch (DRIE)

被引：1

作者：

Sun, H ^{[1
]}

Hill, T ^{[1
]}

Taylor, H ^{[1
]}

Schmidt, M ^{[1
]}

Boning, D ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

MEMS 2005 Miami: Technical Digest | 2005年

关键词：

D O I：

10.1109/MEMSYS.2005.1453974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of MEMS devices. Non-uniformity depends on uneven distributions of ion and neutral species at the wafer-level, and local consumption at the die-level. An ion-neutral synergism model is constructed from data obtained from several layouts of differing layout pattern densities, and is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with the die-level model, which we have reported previously [1], on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.

引用

页码：491 / 495

页数：5

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