Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes

In typical DRIE processes, the etch rate variation across the wafer increases with pattern density, severely limiting the pattern densities that can be used at a specified etch rate tolerance. Here, we present a scheme for including uniformity-improving dummy structures in the etch mask layout that enable the use of high-density patterns in many DRIE process types. The dummy structures take up relatively little space in the layout and reduce the total etch rate variation of a 35% etchable area pattern by 66% while maintaining a high etch rate.