Towards THz SiGe HBTs

被引：0

作者：

Chevalier, P. ^{[1
]}

Meister, T. F. ^{[2
]}

Heinemann, B. ^{[3
]}

Van Huylenbroeck, S. ^{[4
]}

Liebl, W. ^{[5
]}

Fox, A. ^{[3
]}

Sibaja-Hernandez, A. ^{[4
]}

Chantre, A. ^{[1
]}

机构：

[1] STMicroelectronics, Crolles, France

[2] Infineon Technol, Munich, Germany

[3] IHP, Frankfurt, Germany

[4] IMEC, Leuven, Belgium

[5] Infineon Technol, Regensburg, Germany

来源：

2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2011年

关键词：

Heterojunction bipolar transistors; Millimeter wave transistors; Silicon germanium;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper summarizes the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE. The architectures of the different partners and their performances are presented and discussed showing that the project objectives have been met.

引用

页码：57 / 65

页数：9

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