Towards THz SiGe HBTs

被引：0

作者：

Chevalier, P. ^{[1
]}

Meister, T. F. ^{[2
]}

Heinemann, B. ^{[3
]}

Van Huylenbroeck, S. ^{[4
]}

Liebl, W. ^{[5
]}

Fox, A. ^{[3
]}

Sibaja-Hernandez, A. ^{[4
]}

Chantre, A. ^{[1
]}

机构：

[1] STMicroelectronics, Crolles, France

[2] Infineon Technol, Munich, Germany

[3] IHP, Frankfurt, Germany

[4] IMEC, Leuven, Belgium

[5] Infineon Technol, Regensburg, Germany

来源：

2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2011年

关键词：

Heterojunction bipolar transistors; Millimeter wave transistors; Silicon germanium;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper summarizes the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE. The architectures of the different partners and their performances are presented and discussed showing that the project objectives have been met.

引用

页码：57 / 65

页数：9

共 50 条

[21] THE EFFECTS OF STRAIN ON THE MICROWAVE PERFORMANCE OF SIGE HBTS
ROSENFELD, D
ALTEROVITZ, SA
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1993, 6 (12) : 689 - 692
[22] Proton radiation tolerance of SiGe power HBTs
Jiang, Ningyue
Ma, Zhenqiang
Ma, Pingxi
Racanelli, Marco
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) : S46 - S49
[23] Operation of SiGe HBTs Down to 70 mK
Ying, Hanbin
Wier, Brian R.
Dark, Jason
Lourenco, Nelson E.
Ge, Luwei
Omprakash, Anup P.
Mourigal, Martin
Davidovic, Dragomir
Cressler, John D.
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 12 - 15
[24] Static Performance of SiGe HBTs at Low Temperature
Lakhdara, Maya
Latreche, Saida
Gontrand, Christian
ELECTRONICS, MECHATRONICS AND AUTOMATION III, 2014, 666 : 59 - +
[25] Thermal Impedance Model for Multifinger SiGe HBTs
Pander, Shubham
Nidhin, K.
Balanethiram, Suresh
Yadav, Shon
Chakravorty, Anjan
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 604 - 606
[26] The microwave performance of SiGe Si HBTs and amplifiers
Zhao, LX
Shen, GD
ICMMT'98: 1998 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 1998, : 96 - 99
[27] Performance of SiGe-HBTs and its amplifiers
Senapati, B
Maiti, CK
SOLID-STATE ELECTRONICS, 2001, 45 (11) : 1905 - 1908
[28] BEOL Thermal Resistance Extraction in SiGe HBTs
Nidhin, K.
Balanethiram, Suresh
Nair, Deleep R. R.
D'Esposito, Rosario
Mohapatra, Nihar R. R.
Fregonese, Sebastien
Zimmer, Thomas
Chakravorty, Anjan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 6541 - 6546
[29] A NEW GENERATION OF HIGH FREQUENCY SIGE HBTs
Heinemann, Bernd
Fox, Alexander
MICROWAVE JOURNAL, 2011, 54 (09) : 122 - +
[30] DYNAMIC CHARACTERIZATION OF SI/SIGE POWER HBTS
ERBEN, U
GRUHLE, A
SCHUPPEN, A
KIBBEL, H
KOENIG, U
ELECTRONICS LETTERS, 1994, 30 (06) : 525 - 527

← 1 2 3 4 5 →