Temperature dependent gain characteristics of ZnSe based separate-confinement-heterostructure lasers with binary wells

被引：0

作者：

Michler, P ^{[1
]}

Pereira, MF ^{[1
]}

Homburg, O ^{[1
]}

Nerger, L ^{[1
]}

Gutowski, J ^{[1
]}

Wenisch, H ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

来源：

BLUE LASER AND LIGHT EMITTING DIODES II | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using optical gain spectroscopy we have examined the intrinsic factors governing the laser operation of ZnSe/(Zn,Mg) (S,Se)/(Zn,Mg) (S,Se) separate confinement heterostructures up to room temperature. At low temperatures (T < 80 K) the optical gain is of biexcitonic nature. Above 80 It, the threshold pump intensity grows steeply and the laser emission turns into recombination of a strongly correlated electron-hole plasma as described by a microscopic-theory approach.

引用

页码：528 / 531

页数：4

共 48 条

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