Static and dynamic characteristics of metalorganic-vapor-phase-epitaxy-grown 1585 nm InGaAs/InGaAlAs separate confinement heterostructure multiple-quantum-well metal-clad ridge-waveguide lasers

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[1] Stegmueller, Bernhard

[2] Borchert, Bernd

[3] Hedrich, Harald

[4] Lang, Hans

[5] Asam, Gabriele

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Stegmueller, Bernhard | 1600年 / 30期

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共 15 条

[1] STATIC AND DYNAMIC CHARACTERISTICS OF METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN 1585 NM INGAAS/INGAALAS SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL METAL-CLAD RIDGE-WAVE-GUIDE LASERS
STEGMULLER, B
BORCHERT, B
HEDRICH, H
LANG, H
ASAM, G
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2781 - 2785
[2] VERY LOW THRESHOLD INGAAS/INGAASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASERS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
TANBUNEK, T
LOGAN, RA
TEMKIN, H
BERTHOLD, K
LEVI, AFJ
CHU, SNG
APPLIED PHYSICS LETTERS, 1989, 55 (22) : 2283 - 2285
[3] LOW THRESHOLD CURRENT MOVPE GROWN GAINAS-AL(GA)INAS SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIQUANTUM WELL METAL-CLAD RIDGE-WAVE-GUIDE LASERS EMITTING AT 1585-NM
STEGMULLER, B
GESSNER, R
BESCHORNER, M
FRANZ, G
SACHER, D
BORCHERT, B
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (09) : 609 - 611
[4] 2.1-μm wavelength strained InGaAs multiple-quantum-well lasers grown by metalorganic vapor phase epitaxy assisted by Sb surfactant
Sato, T
Mitsubara, M
Watanabe, T
Kasaya, K
Kondo, Y
2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 2005, : 370 - 371
[5] PERIODIC INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS/ALGAAS MULTIPLE QUANTUM-WELL LASER GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
HOBSON, WS
WU, MC
CHEN, YK
CHIN, MA
GEVA, M
JONES, KS
APPLIED PHYSICS LETTERS, 1992, 60 (05) : 598 - 600
[6] High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy
Luo, S.
Ji, H. M.
Gao, F.
Xu, F.
Yang, X. G.
Liang, P.
Yang, T.
OPTICS EXPRESS, 2015, 23 (07): : 8383 - 8388
[7] RELIABLE 1.5-MU-M BURIED HETEROSTRUCTURE, SEPARATE CONFINEMENT, MULTIPLE QUANTUM WELL (BH-SC-MQW) LASERS ENTIRELY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE)
SELTZER, CP
BURNESS, AL
STEVENSON, M
HARLOW, MJ
COOPER, DM
REDSTALL, RM
SPURDENS, PC
ELECTRONICS LETTERS, 1989, 25 (21) : 1449 - 1451
[8] PRELIMINARY RELIABILITY STUDIES OF 1.55-MU-M GRADED INDEX SEPARATE CONFINEMENT BURIED HETEROSTRUCTURE (GRINSCH) MULTIPLE QUANTUM-WELL (MQW) LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE)
REDSTALL, RM
SKEATS, AP
COOPER, DM
BURNESS, AL
ELECTRONICS LETTERS, 1990, 26 (15) : 1132 - 1133
[9] Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1 μm by metalorganic vapor phase epitaxy -: art. no. 211903
Sato, T
Mitsuhara, M
Watanabe, T
Kondo, Y
APPLIED PHYSICS LETTERS, 2005, 87 (21) : 1 - 3
[10] ALINGAAS/ALGAAS SEPARATE-CONFINEMENT HETEROSTRUCTURE STRAINED SINGLE QUANTUM-WELL DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
WANG, CA
WALPOLE, JN
MISSAGGIA, LJ
DONNELLY, JP
CHOI, HK
APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2208 - 2210

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