Static and dynamic characteristics of metalorganic-vapor-phase-epitaxy-grown 1585 nm InGaAs/InGaAlAs separate confinement heterostructure multiple-quantum-well metal-clad ridge-waveguide lasers

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[1] Stegmueller, Bernhard

[2] Borchert, Bernd

[3] Hedrich, Harald

[4] Lang, Hans

[5] Asam, Gabriele

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Stegmueller, Bernhard | 1600年 / 30期

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共 15 条

[11] GROWTH AND CHARACTERIZATION OF CONTINUOUSLY GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE (GRIN-SCH) INGAAS-INP LONG WAVELENGTH STRAINED LAYER QUANTUM-WELL LASERS BY METALORGANIC VAPOR-PHASE EPITAXY
TANBUNEK, T
LOGAN, RA
TEMKIN, H
CHU, SNG
OLSSON, NA
SERGENT, AM
WECHT, KW
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (08) : 1323 - 1327
[12] THE METAL ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAINASP AND GAAIINAS BASED GRADED REFRACTIVE-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM-WELL LASERS INCORPORATING LINEARLY GRADED CONFINEMENT LAYERS
CARR, N
WOOD, AK
THOMPSON, J
MAUNG, N
ASH, RM
MOSELEY, AJ
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 355 - 360
[13] SPECTRAL LINEWIDTH REDUCTION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN 1.5-MU-M SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM WELL DISTRIBUTED FEEDBACK LASER-DIODES
TAKANO, S
SASAKI, T
YAMADA, H
KITAMURA, M
MITO, I
APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2019 - 2020
[14] STATIC CHARACTERISTICS OF GAINASP INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES (GRIN-SCH QW LDS) GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
KASUKAWA, A
MATSUMOTO, N
NAMEGAYA, T
IMAJO, Y
IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (12) : 1541 - 1554
[15] 1.3 MU-M GAINASP-INP BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL (BH-GRIN-SC-MQW) LASERS ENTIRELY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
KASUKAWA, A
IMAJO, Y
MAKINO, T
ELECTRONICS LETTERS, 1989, 25 (02) : 104 - 105

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