Semiconductor cavity QED with squeezed light: Nonlinear regime

被引：67

作者：

Sete, Eyob A. ^{[1
,2
]}

Eleuch, H. ^{[3
]}

Das, Sumanta ^{[4
]}

机构：

[1] Texas A&M Univ, Inst Quantum Sci & Engn, College Stn, TX 77843 USA

[2] Texas A&M Univ, Dept Phys & Astron, College Stn, TX 77843 USA

[3] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany

[4] Max Planck Inst Kernphys, D-69117 Heidelberg, Germany

来源：

PHYSICAL REVIEW A | 2011年 / 84卷 / 05期

关键词：

QUANTUM-NOISE; STATES; MICROCAVITY; GENERATION;

D O I：

10.1103/PhysRevA.84.053817

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a study of semiconductor cavity QED effects with squeezed light. We investigate the effects of external squeezed light produced by a subthreshold optical parametric down conversion on the quantum features of the cavity as well as output radiation in the presence of exciton-exciton scattering. It turns out that the width of the spectrum of the cavity field strongly depends on the degree of squeezing. This effect is observed both in weak- and strong-coupling regimes. Moreover, we show that the external squeezed light has a profound effect on the amount of squeezing of the output field.

引用

页数：5

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