Semiconductor cavity QED with squeezed light: Nonlinear regime

被引:67
|
作者
Sete, Eyob A. [1 ,2 ]
Eleuch, H. [3 ]
Das, Sumanta [4 ]
机构
[1] Texas A&M Univ, Inst Quantum Sci & Engn, College Stn, TX 77843 USA
[2] Texas A&M Univ, Dept Phys & Astron, College Stn, TX 77843 USA
[3] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
[4] Max Planck Inst Kernphys, D-69117 Heidelberg, Germany
来源
PHYSICAL REVIEW A | 2011年 / 84卷 / 05期
关键词
QUANTUM-NOISE; STATES; MICROCAVITY; GENERATION;
D O I
10.1103/PhysRevA.84.053817
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a study of semiconductor cavity QED effects with squeezed light. We investigate the effects of external squeezed light produced by a subthreshold optical parametric down conversion on the quantum features of the cavity as well as output radiation in the presence of exciton-exciton scattering. It turns out that the width of the spectrum of the cavity field strongly depends on the degree of squeezing. This effect is observed both in weak- and strong-coupling regimes. Moreover, we show that the external squeezed light has a profound effect on the amount of squeezing of the output field.
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页数:5
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