Effect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions

被引：2
|
作者：
Abu Jeriban, Salima [1 ,2 ]
Guiot, Ivette [1 ]
Bacherius, Luc [1 ]
Proost, Joris [1 ]
Sleeckx, Erik [2 ]
Vos, Rita [2 ]
Mertens, Paul [2 ]
机构：
[1] Catholic Univ Louvain, Div Mat & Proc Engn, B-3001 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
来源：
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII | 2008年 / 134卷
关键词：
etching; doped silicon; post-ion implantation cleaning; HF;
D O I：
10.4028/www.scientific.net/SSP.134.139
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：139 / +
页数：2
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