Effect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions

被引：2

作者：

Abu Jeriban, Salima ^{[1
,2
]}

Guiot, Ivette ^{[1
]}

Bacherius, Luc ^{[1
]}

Proost, Joris ^{[1
]}

Sleeckx, Erik ^{[2
]}

Vos, Rita ^{[2
]}

Mertens, Paul ^{[2
]}

机构：

[1] Catholic Univ Louvain, Div Mat & Proc Engn, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII | 2008年 / 134卷

关键词：

etching; doped silicon; post-ion implantation cleaning; HF;

D O I：

10.4028/www.scientific.net/SSP.134.139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / +

页数：2

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