Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

被引：0

作者：

Nallet, F ^{[1
]}

Sénès, A ^{[1
]}

Planson, D ^{[1
]}

Locatelli, ML ^{[1
]}

Chante, JP ^{[1
]}

Taboy, JP ^{[1
]}

机构：

[1] INSA Lyon, Ctr Genie Elect Lyon, CEGELY, UMR 5005, F-69621 Villeurbanne, France

来源：

IPEMC 2000: THIRD INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, PROCEEDINGS | 2000年

关键词：

SiC; current limiting device; serial protection; temperature; 2D finite element simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. By the way, a 4H-SiC current limiting device is studied. The device structure is a vertical power Mosfet like with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside a HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system.

引用

页码：396 / 401

页数：6

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