Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes

被引：0
|
作者：
Losee, P. A. [1 ]
Wang, Y. [1 ]
Li, C. [1 ]
Sharma, S. K. [1 ]
Bhat, I. B. [1 ]
Chow, T. P. [1 ]
Gutmann, R. J. [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
4H-SiC PiN; Diode;
D O I：
10.4028/www.scientific.net/MSF.600-603.1003
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated diodes with various epitaxial anode layer designs as well as those employing P+ implanted injecting layers are used to experimentally investigate the device conduction mechanisms. The role of the injecting layer is demonstrated via electrical characteristics and numerical simulations, showing the importance of maintaining sufficient carrier recombination lifetime in the device anode region.
引用
收藏
页码：1003 / 1006
页数：4
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