High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes

被引：67
|
作者：
Bai, Xiaogang [1 ]
Guo, Xiangyi [1 ]
Mcintosh, Dion C. [1 ]
Liu, Han-Din [1 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Sch Engn & Appl Sci, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 11-12期
关键词：
avalanche photodiodes (APDs); linear mode; silicon; carbide (SiC); ultraviolet (UV);
D O I：
10.1109/JQE.2007.905031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000 a 100-mu m-diameter device exhibits dark current of 5 pA (63 nA/cm(2))corresponding to primary multiplied dark current of 5 fA (63 pA/cm(2)). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda =280 nm. The excess noise factor corresponds to kappa = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.
引用
收藏
页码：1159 / 1162
页数：4
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