High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes

被引：67

作者：

Bai, Xiaogang ^{[1
]}

Guo, Xiangyi ^{[1
]}

Mcintosh, Dion C. ^{[1
]}

Liu, Han-Din ^{[1
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Sch Engn & Appl Sci, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 11-12期

关键词：

avalanche photodiodes (APDs); linear mode; silicon; carbide (SiC); ultraviolet (UV);

D O I：

10.1109/JQE.2007.905031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000 a 100-mu m-diameter device exhibits dark current of 5 pA (63 nA/cm(2))corresponding to primary multiplied dark current of 5 fA (63 pA/cm(2)). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda =280 nm. The excess noise factor corresponds to kappa = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.

引用

页码：1159 / 1162

页数：4

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