Overlap scanning of CW laser for crystallization of a-Si

被引：0
|
作者：
Kim, Ki Hyung [1 ]
Kim, Eun Hyun [1 ]
Park, Seong Jin [1 ]
Ku, Yu Mi [1 ]
Kim, Chae Ok
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ciystallization of a-Si by overlap scan using CW Nd:YVO4 laser has been investigated with SEM, AFM, and Raman spectroscopy. The results show that the grains existing near each laser scan boundary meet together forming single grains. That means the width of grains formed by prior-scanning affects the width of the grains formed by the following scan. Thus, the overlap scanning method can be applied to large grained poly-Si fabrication for LTPS processing.
引用
收藏
页码：1183 / 1185
页数：3
相关论文
共 50 条
  • [41] FEMTOSECOND LASER-INDUCED SURFACE TEXTURING AND CRYSTALLIZATION OF A-Si:H THIN FILM
    Wang, Hongliang
    Kongsuwan, Panjawat
    Satoh, Gen
    Yao, Y. Lawrence
    PROCEEDINGS OF THE ASME INTERNATIONAL MANUFACTURING SCIENCE AND ENGINEERING CONFERENCE 2010, VOL 2, 2011, : 255 - 264
  • [42] Selective crystallization of a-Si by using a shadow mask
    Kim, K. H.
    Park, S. J.
    Ku, Y. M.
    Kim, E. H.
    Bae, J. H.
    Kim, K. S.
    Kwon, B. H.
    Kim, C. O.
    Jang, J.
    IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2006, : 777 - +
  • [43] Formation of the patterned nano-crystalline Si by pulsed laser interference crystallization of a-Si:H thin films
    Wang, MX
    Chen, KJ
    Jiang, M
    Liu, XY
    Wu, ZC
    Li, W
    Wang, M
    Huang, XF
    LASER PROCESSING OF MATERIALS AND INDUSTRIAL APPLICATIONS II, 1998, 3550 : 80 - 84
  • [44] Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells
    Wilkes, George C.
    Upadhyaya, Ajay D.
    Rohatgi, Ajeet
    Gupta, Mool C.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2020, 10 (05): : 1283 - 1289
  • [45] Crystallization of a-Si films with smooth surfaces by using Blue Multi-Laser Diode Annealing
    Okada, Tatsuya
    Sugihara, Kouya
    Chinen, Satoshi
    Noguchi, Takashi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (08) : 1265 - 1269
  • [46] Effect of hydrogen on surface texturing and crystallization of a-Si:H thin film irradiated by excimer laser
    Hongliang Wang
    Fernando Lusquiños
    Y. Lawrence Yao
    Applied Physics A, 2012, 107 : 307 - 320
  • [47] Crystallization kinetics of Cu/a-Si bilayer recording film under thermal and pulsed laser annealing
    Her, YC
    Wu, CL
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5563 - 5568
  • [48] Effect of hydrogen on surface texturing and crystallization of a-Si:H thin film irradiated by excimer laser
    Wang, Hongliang
    Lusquinos, Fernando
    Yao, Y. Lawrence
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 107 (02): : 307 - 320
  • [49] Numerical simulation and experimental analysis on the crystal growth of excimer-laser crystallization of a-Si film
    Chao, Long-Sun
    Chen, Yu-Ru
    Peng, Hsiun-Chang
    PROCEEDINGS OF THE MICRO/NANOSCALE HEAT TRANSFER INTERNATIONAL CONFERENCE 2008, PTS A AND B, 2008, : 1163 - 1170
  • [50] Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
    Belik, V. P.
    Vasyutinskii, O. S.
    Kukin, A. V.
    Petrov, M. A.
    Popov, R. S.
    Terukov, E. I.
    TECHNICAL PHYSICS LETTERS, 2016, 42 (08) : 788 - 791
12345