Overlap scanning of CW laser for crystallization of a-Si

被引：0
|
作者：
Kim, Ki Hyung [1 ]
Kim, Eun Hyun [1 ]
Park, Seong Jin [1 ]
Ku, Yu Mi [1 ]
Kim, Chae Ok
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ciystallization of a-Si by overlap scan using CW Nd:YVO4 laser has been investigated with SEM, AFM, and Raman spectroscopy. The results show that the grains existing near each laser scan boundary meet together forming single grains. That means the width of grains formed by prior-scanning affects the width of the grains formed by the following scan. Thus, the overlap scanning method can be applied to large grained poly-Si fabrication for LTPS processing.
引用
收藏
页码：1183 / 1185
页数：3
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