3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

被引：25
|
作者：
Vizbaras, K. [1 ]
Amann, M. -C. [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 17期
关键词：
D O I：
10.1049/el.2011.2032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6 mu m is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862 A/cm(2) at infinite resonator length at 15 degrees C and 20 mW of average output power per facet.
引用
收藏
页码：980 / U61
页数：2
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